Innovative Infrared-pulsed laser assisted RF sputtered β-Ga2O3 thin film at low temperature process

초록

Innovative new method for the pulsed laser assisted radio-frequency sputtering at low temperature process was successfully applied for the β phase Ga2O3 thin film as wide band gap materials. Thin film of wide bandgap material, β-Ga2O3, was successfully deposited on SiO2/Si and quartz substrates by employing radio-frequency sputtering system with assisting process of ytterbium-laser irradiation. Both sputtering system and infrared pulsed laser irradiation process were employed at the same time to increase the acquired energy densities for the adatoms on the thin film growth process. X-ray diffraction patterns (XRD) showed the prominent peaks of unique crystalline properties of Ga2O3 thin films in β phase. The optical energy bandgap of Ga2O3 thin films derived from spectral transmittance was measured in the range of 4.90–5.06 eV for a variation of laser power. High resolution X-ray photon spectroscopy (XPS) analysis showed that O 1s and Ga 3d position in core level. We confirm that infrared optical energy was effectively added to fabricate β-Ga2O3 thin film by employing the Yb-laser-assisted RF sputtering process. © 2021 Elsevier B.V.

키워드