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Cyclotron mass of two-dimensional holes in strained Si/Si0.88Ge0.12/Si heterostructures
- Song, S.-H.;
- Tsui, D.C.;
- Fang, F.F.
Citations
SCOPUS
7초록
We have observed cyclotron resonance of the two-dimensional holes in strained layer Si/Si0.88Ge0.12/Si heterostructures with densities ps=3.7×1011cm-2 and 4.2×1011cm-2 in magnetic fields from 4T to 8T at 4.2K. Our data yield a mass value of (0.18±0.02)me, in good agreement with the calculated in-plane mass of the MJ=± 32 heavy hole band. © 1995.
키워드
A. semiconductors; D. cyclotron resonance; Chemical vapor deposition; Cyclotron resonance; Magnetic fields; Semiconducting silicon; Semiconducting silicon compounds; Semiconductor doping; Semiconductor growth; Semiconductor quantum wells; Band edge mass; Cyclotron mass; Heavy hole band; Hole mobility; Two-dimensional holes; Heterojunctions
- 제목
- Cyclotron mass of two-dimensional holes in strained Si/Si0.88Ge0.12/Si heterostructures
- 저자
- Song, S.-H.; Tsui, D.C.; Fang, F.F.
- 발행일
- 1995-10
- 유형
- Article
- 권
- 96
- 호
- 2
- 페이지
- 61 ~ 63
- 언어
- ENG
- 발행국가
- 영국
- 분량
- 3 페이지
- ISSN
- P 0038-1098