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SiC Nanopowders-Incorporated Dual-Channel TiZnSnO/ZnSnO Thin Film Transistors
- Cho, Seulki;
- Park, Sung-Joon;
- Min, Seong-Ji;
- An, Jae-In;
- Yoon, Yo-Seop;
- ... Lee, Sang-Kwon;
- 외 3명
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0초록
In this study, we investigated the effect of incorporating silicon carbide (SiC) nanopowders (NPs) on the electrical properties of dual-channel TiZnSnO/ZnSnO (TZTO/ZTO) thin film transistors (TFTs) with different Ti molar ratios. Our results show that solution processed TZTO/ZTO TFT devices incorporating SiC NPs show a current (IDS @ VGS similar to 5 V) increase from similar to 5.56 x 10(6) to similar to 9.41 x 10(6) A. It was found that the addition of Ti on ZTO layers results in changing their carrier concentration due to the decrease of O2- ions, with a resulting decrease of the off-current. The on/off current ratio of the TFTs was as large as 7.22 x 10(3) at 0.01 M Ti molar ratio with SiC NPs.
키워드
Silicon-Carbide Nanopowders; Ti-Zinc-Tin Oxide; Dual-Channel; Thin Film Transistors; Solution Process; OXIDE; PERFORMANCE; OXIDATION; BEHAVIOR
- 제목
- SiC Nanopowders-Incorporated Dual-Channel TiZnSnO/ZnSnO Thin Film Transistors
- 저자
- Cho, Seulki; Park, Sung-Joon; Min, Seong-Ji; An, Jae-In; Yoon, Yo-Seop; Moon, Byungmoo; Choi, Youngwoong; Lee, Sang-Kwon; Koo, Sang-Mo
- 발행일
- 2018-11
- 유형
- Article
- 권
- 10
- 호
- 11
- 페이지
- 1562 ~ 1566
- 출판사
- AMER SCIENTIFIC PUBLISHERS
- 발행국가
- 미국
- 분량
- 5 페이지
- ISSN
- E 1941-4919
P 1941-4900