A 0.007 mm 0.6 V 6 MS/s Low-Power Double Rail-to-Rail SAR ADC in 65-nm CMOS

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초록

A 0.007mm 0.6V 6MS/s 10b double rail-to-rail input range SAR ADC is implemented in 65-nm technology. The extended input range broadens the applications of the low-power SAR ADCs such as compute-in-memory. The proposed ADC occupies less area since it only needs additional two seriesconnected capacitors and a differential-difference comparator for double rail-to-rail operation. The set-and-down operation reduces the input-referred noise of the comparator by over ten times than complementary switching. The novel metal-insulator-metal and metal-oxide-metal capacitor hybrid cap-DAC architecture minimize the gain error of ADC. The prototype achieves SNR of 53.90-dB, SNDR of 52.12-dB, and SFDR of 60.39-dB, power of 12.98-muW, and FoM of 6.6-fJ/conv.-step.

키워드

CapacitorsCircuits and systemscompute-in-memorydouble rail-to-raillow-powerParasitic capacitancepower-efficient.RedundancySAR ADCSignal to noise ratioSwitchesTransistorsCMOS integrated circuitsComparator circuitsComparators (optical)Metal insulator boundariesSignal to noise ratio65-nm technologiesGain errorsMetal insulator metalsMetal oxidesRail-to-RailRail-to-rail inputRail-to-rail operationSeries-connectedMetals
제목
A 0.007 mm 0.6 V 6 MS/s Low-Power Double Rail-to-Rail SAR ADC in 65-nm CMOS
저자
Jo, Y.Kim, J.E.Baek, K.Kim, T.T.
DOI
10.1109/TCSII.2021.3097126
발행일
2021-09
유형
Article; Proceedings Paper
저널명
IEEE Transactions on Circuits and Systems II: Express Briefs
68
9
페이지
3088 ~ 3092