Gate Driving Circuit for Pulse Solid State Pulsed Discharging Switch Unit

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초록

High voltage semiconductor switches with advantages, including high efficiency and life-span etc, have been widely used as pulse discharging switches for High voltage pulsed power modulators. However, owing to the limit voltage ratings of switches, a series stacking structure must be used to generate high voltage pulse of the order of tens to hundreds of kilovolts. When driving series stacking of switches, to supply insulated power and synchronous gate driving signal to each gate driver for achieving synchronous operation is indispensable consideration because some of the switches could be damaged by the voltage which is higher than their rated if the operation fails. In addition, when switch is turned off, the current flowing through the Miller capacitance due to the fast voltage rise across the switch is the cause of the self-turn-on.

제목
Gate Driving Circuit for Pulse Solid State Pulsed Discharging Switch Unit
저자
Lee, Y.-S.Jeong, W.-C.Ryoo, H.-J.
DOI
10.1109/PPPS56198.2025.11248769
발행일
2025
유형
Conference Paper
저널명
IEEE International Pulsed Power Conference