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Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells
- Kang, Dong-Won;
- Kwon, Jang-Yeon;
- Shim, Jenny;
- Lee, Heon-Min;
- Han, Min-Koo
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21초록
Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an antireflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (mu c-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of pc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO2/ZnO bilayer ARL Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (similar to 10 nm) in case of the TiO2/ZnO bilayer. GaN ARL can replace the TiO2/ZnO bilayer ARL in terms of high performance and simple fabrication process. (c) 2012 Elsevier B.V. All rights reserved.
키워드
GaN; TiO2/ZnO; Anti-reflection layer; Microcrystalline silicon; Thin film solar cells; TEMPERATURE
- 제목
- Highly conductive GaN anti-reflection layer at transparent conducting oxide/Si interface for silicon thin film solar cells
- 저자
- Kang, Dong-Won; Kwon, Jang-Yeon; Shim, Jenny; Lee, Heon-Min; Han, Min-Koo
- 발행일
- 2012-10
- 유형
- Article
- 권
- 105
- 페이지
- 317 ~ 321