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Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
- Kim, Sungjun;
- Chen, Jia;
- Chen, Ying-Chen;
- Kim, Min-Hwi;
- Kim, Hyungjin;
- 외 7명
WEB OF SCIENCE
111SCOPUS
115초록
We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary metal-oxide-semiconductor-compatible materials (hafnium oxide, aluminum oxide, and silicon substrate). A wide range of temperatures, from 25 degrees C up to 145 degrees C, in neuronal dynamics was achieved owing to the homeothermic properties and the possibility of spike-induced synaptic behaviors was demonstrated, both presenting critical milestones for the use of emerging memristor-type neuromorphic computing systems in the near future. Biological synaptic behaviors, such as long-term potentiation, long-term depression, and spike-timing-dependent plasticity, are developed systematically, and comprehensive neural network analysis is used for temperature changes and to conform spike-induced neuronal dynamics, providing a new research regime of neurocomputing for potentially harsh environments to overcome the self-heating issue in neuromorphic chips.
키워드
- 제목
- Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
- 저자
- Kim, Sungjun; Chen, Jia; Chen, Ying-Chen; Kim, Min-Hwi; Kim, Hyungjin; Kwon, Min-Woo; Hwang, Sungmin; Ismail, Muhammad; Li, Yi; Miao, Xiang-Shui; Chang, Yao-Feng; Park, Byung-Gook
- 발행일
- 2019-01
- 유형
- Article
- 저널명
- Nanoscale
- 권
- 11
- 호
- 1
- 페이지
- 237 ~ 245
- 언어
- ENG
- 출판사
- ROYAL SOC CHEMISTRY
- 발행국가
- 영국
- 분량
- 9 페이지
- ISSN
- E 2040-3372
P 2040-3364