Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

  • Kim, Sungjun; 
  • Chen, Jia; 
  • Chen, Ying-Chen; 
  • Kim, Min-Hwi; 
  • Kim, Hyungjin; 
  • 외 7명
Citations

WEB OF SCIENCE

111
Citations

SCOPUS

115

초록

We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary metal-oxide-semiconductor-compatible materials (hafnium oxide, aluminum oxide, and silicon substrate). A wide range of temperatures, from 25 degrees C up to 145 degrees C, in neuronal dynamics was achieved owing to the homeothermic properties and the possibility of spike-induced synaptic behaviors was demonstrated, both presenting critical milestones for the use of emerging memristor-type neuromorphic computing systems in the near future. Biological synaptic behaviors, such as long-term potentiation, long-term depression, and spike-timing-dependent plasticity, are developed systematically, and comprehensive neural network analysis is used for temperature changes and to conform spike-induced neuronal dynamics, providing a new research regime of neurocomputing for potentially harsh environments to overcome the self-heating issue in neuromorphic chips.

키워드

HAFNIUM OXIDE; HIGH-DENSITY; MEMORY; DEVICE; RESISTANCE; MECHANISM; TEMPERATURE; BEHAVIORS; SYSTEM
제목
Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
저자
Kim, Sungjun; Chen, Jia; Chen, Ying-Chen; Kim, Min-Hwi; Kim, Hyungjin; Kwon, Min-Woo; Hwang, Sungmin; Ismail, Muhammad; Li, Yi; Miao, Xiang-Shui; Chang, Yao-Feng; Park, Byung-Gook
DOI
10.1039/c8nr06694a
발행일
2019-01
유형
Article
저널명
Nanoscale
권
11
호
1
페이지
237 ~ 245