Effect of Spin Coating Speed on the Electrical Performances of Solution-Processed Indium Zinc Oxide Thin-Film Transistors

초록

We report on indium zinc oxide (IZO) semiconductor thin-film transistors (TFTs) prepared with different spin coating speeds in this study. The IZO TFTs were fabricated by a simple and effective solution processing technique and the highest annealing temperature used was 400 degrees C. We investigated the electrical performance of the IZO TFTs as a function of the spin coating speed. According to the obtained results, the most stable performance of the IZO TFTs, which were made by 2000 rpm spin coating speed, has high saturation mobility (2.10 cm(2)/Vs), low subthreshold swing (0.59 V/dec.), and high on-off current ratio (2.6x10(7)). We measured the time, annealing temperature, and the electrical performance dependence of the spin coating speed. The obtained results demonstrate that the electrical performance of the TFTs could be enhanced by applying an appropriate spin coating speed as well as by improving the experimental parameters.

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