Gamma-L-X mixed symmetry of nitrogen-induced states in GaAs1-xNx probed by resonant Raman scattering

초록

A resonant Raman scattering study near the nitrogen-induced E+ state in GaAs1-xNx at 80 K with special emphasis on all the zone-boundary phonons is used to investigate the full symmetry of the E+ state. We have observed that various phonons at the L- and X-zone boundaries not only emerge as strong and sharp Raman features for excitations near the E+ transition but also exhibit the same intensity resonance enhancement as observed for the zone center phonons, longitudinal-optical (Gamma) and transverse-optical (Gamma). Our data provide strong evidence of significant L and X components in the wave function of the nitrogen-induced E+ state in GaAs1-xNx. (C) 2001 American Institute of Physics.

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