The effect of plasma treatment on the si02 film fabricated without substrate heating for flexible electronics

초록

Silicon dioxide (Si02) films were deposited on crystalline silicon substrate using inductively coupled plasma chemical vapor deposition (ICP-CVD) system. In this paper, various process parameters, such as gas flow rate, ICP RF power and process pressure were discussed for the investigation of deposition of Si02 film. And electrical properties of the Si0 2 film were investigated. Since there was no external heating on the substrate during the deposition, the 5i02 film showed poor electrical characteristics, such as shifted flat-band voltage and high effective charge density. We have proposed helium plasma pre-treatment in order to reduce the interface fixed charge and hydrogen plasma post-treatment for the passivation of interface defect. Our experimental results show that helium plasma pre-treatment supply thermal energy for decomposition of reactant gas and also remove effective charges. Hydrogen post-treatment also enhances electrical characteristics. We measured the effect of the plasma treatment using FT-JR spectrum and C-V characteristics. © 2008 Materials Research Society.