Analysis of temperature dependent characteristics of photodetector based on feedback field effect transistor

초록

Photodetectors (PDs) with high thermal stability are crucial for applications in extreme environments. This study analyzes the temperature-dependent characteristics of a Feedback Field-Effect Transistor (FBFET)-based photodetector within a temperature range of 300 K–450 K using TCAD simulations. The results show that the proposed PD maintains a low dark current and stable illumination current, ensuring excellent thermal stability. While responsivity increases due to thermally assisted tunneling, sensitivity declines with rising temperature. Structural optimizations, such as adjusting the light incident region and body thickness, further enhance performance. These findings provide valuable insights for the development of next-generation high-temperature PDs.

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