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Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors
- Chang, S.H.;
- Chae, S.C.;
- Lee, S.B.;
- Liu, C.;
- Noh, T.W.;
- 외 6명
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141초록
We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses t(BE) and investigated their resistance switching behaviors. The capacitors with t(BE)>= 50 nm exhibited typical unipolar resistance memory switching, while those with t(BE)<= 30 nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner tBE makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory. (C) 2008 American Institute Of Physics.
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- 제목
- Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors
- 저자
- Chang, S.H.; Chae, S.C.; Lee, S.B.; Liu, C.; Noh, T.W.; Lee, J.S.; Kahng, B.; Jang, J.H.; Kim, M.Y.; Kim, D.-W.; Jung, C.U.
- 발행일
- 2008-05
- 유형
- Article
- 권
- 92
- 호
- 18
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- ISSN
- E 1077-3118
P 0003-6951