Raman Shift of Surface Reaction and Plasma Induced Surface Damage by TNF3/BNF3 Reactive Ion Etching Process

초록

We examined the conditions for process optimization with the exposure of hot H2/NF3 mixture to a chemical oxide on the Si surface. Etching characteristics are described; then the etching mechanism is discussed based on the Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) observations that occurred during the etching. This research viewed the hydrogen/NFs based reactive clean process as an oxide, silicon clean process technology to enhance product reliability by improving light controlled etching, which is considered one of the factors that can weaken contact resistance when forming gates and below 10 nm pattern profiles. Furthermore, the existing properties that occur when applied to nanoscale sized holes and trenches with high aspect ratio were also discussed. Graphical Abstract: [Figure not available: see fulltext.] © 2022, The Author(s) under exclusive licence to The Korean Institute of Metals and Materials.

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