INDUCTIVE COUPLED PLASMA ETCHING OF HIGH ASPECT RATIO SILICON CARBIDE MICROCHANNELS FOR LOCALIZED COOLING

초록

High aspect ratio microchannels using high thermal conductivity materials such as silicon carbide (SiC) have recently been explored to locally cool micro-scale power electronics that are prone to on-chip hot spot generation. Analytical and finite element modeling shows that SiC-based microchannels used for localized cooling should have high aspect ratio features (above 8:1) to obtain heat transfer coefficients (300 to 600 kW/m(2).K) required to obtain gallium nitride (GaN) device channel temperatures below 100 degrees C. This work presents experimental results of microfabricating high aspect ratio microchannels in a 4H-SiC substrate using inductively coupled plasma (ICP) etching. Depths of 90 mu m and 80 mu m were achieved with a 5:1 and 12:1 aspect ratio, respectively. This microfabrication process will enable the integration of microchannels (backside features) with high power density devices such as GaN-on-SiC based electronics, as well as other SiC-based microfluidic applications.

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