Inverted InP quantum dot light-emitting diodes using low-temperature solution-processed metal-oxide as an electron transport

초록

The present work shows the inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a sol gel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). In contrary to high annealing temperature (>200 degrees C) for conventional ZnO films, low temperature annealing (similar to 150 degrees C) was perforrned for sol gel derived ZnO film. The performance of the inverted QD-LEDs was efficiently improved by optimization of the annealing time and temperature of ZnO ETL. The current efficiency was significantly improved about 215% by lowering annealing temperature of ZnO ETL. (C) 2015 The Japan Society of Applied Physics

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