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Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots
- Jung, SK;
- Song, SH;
- Hwang, SW;
- Park, JH;
- Kim, Y;
- 외 1명
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1초록
We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot. (C) 1999 Elsevier Science B.V. All rights reserved.
키워드
planar device; self-assembled quantum dot; resonant tunneling; ROOM-TEMPERATURE; TRANSISTOR; SPECTROSCOPY; INGAAS
- 제목
- Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots
- 저자
- Jung, SK; Song, SH; Hwang, SW; Park, JH; Kim, Y; Kim, EK
- 발행일
- 1999-12
- 유형
- Article; Proceedings Paper
- 권
- 272
- 호
- 1-4
- 페이지
- 18 ~ 20