Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories

Lee, J.-K.; Lee, J.-W.; Park, J.; Chung, S.-W.; Roh, J.S.; Hong, S.-J.; Cho, I.-W.; Kwon, Hyuck-In; Lee, J.-H.

doi:10.1063/1.3575572

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Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories

Lee, J.-K.;
Lee, J.-W.;
Park, J.;
Chung, S.-W.;
Roh, J.S.;
... Kwon, Hyuck-In;
외 3명

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49

초록

Random telegraph noise (RTN) has been studied in amorphous TiOx (α-TiOx) resistance switching random access memories (RRAMs). The RTN having two discrete current levels was observed only in the high-resistance state of the RRAMs. By investigating the bias dependence of capture and emission time constants, we extracted the vertical location of a trap responsible for the RTN in RRAM devices. The trap causing the RTN was found around 5.7 nm below the Ti (top electrode). The trap energy was less by 0.18 eV than the conduction band edge of the TiOx. © 2011 American Institute of Physics.

키워드

Amorphous TiO; Bias dependence; Conduction band edge; Current levels; Emission time; High-resistance state; Random access memories; Random telegraph noise; Resistance random access memory; Resistance switching; TiO; Trap energy; Electron mobility; Telegraph; Random access storage

제목: Extraction of trap location and energy from random telegraph noise in amorphous TiOx resistance random access memories

저자: Lee, J.-K.; Lee, J.-W.; Park, J.; Chung, S.-W.; Roh, J.S.; Hong, S.-J.; Cho, I.-W.; Kwon, Hyuck-In; Lee, J.-H.

DOI: 10.1063/1.3575572

발행일: 2011-04

유형: Article

저널명: Applied Physics Letters

권: 98

호: 14

언어: ENG

출판사: AMER INST PHYSICS, CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA

발행국가: 미국

ISSN: E 1077-3118
P 0003-6951