Transition metal dichalcogenide homojunction structure with improved seebeck coefficient and method of forming the same

초록

A transition dichalcogenide homojunction structure may include a lower high resistance layer including a plurality of PtX2 layers and an upper low resistance layer which includes the plurality of PtX2 layers and has different thickness and number of growth layers from the lower high resistance layer. And the lower high resistance layer and the upper low resistance layer may form a homojunction. The heat transfer characteristic of the lower high resistance layer may increase by the interface induced Seebeck effect with the upper low resistance layer. The transition dichalcogenide homojunction structure may generate the interface induced Seebeck effect at the interface of the homojunction to generate a thermal voltage. Further, the transition metal dichalcogenide homojunction structure may measure the Seebeck effect of the lower high resistance layer using the upper low resistance layer without separate measurement equipment.