Cl2/Ar 플라즈마를 이용한 Al2O3 박막의 식각

초록

In this study, adaptively coupled plasma (ACP) source was used for dry etching of Al2O3 thin film. During the etching process, the wafer surface temperature is an important parameter to influent the etching characteristics. Therefore, the experiments were carried out in ACP to measuring the etch rate, the selectivities of Al2O3 thin film to mask materials and the etch profile as functions of Cl2/Ar gas ratio and substrate temperature. The highest etch rate of Al2O3 was 65.4 nm/min at 75% of Cl2/ (Cl2+Ar) gas mixing ratio. The etched profile was characterized using field effect scanning electron microscopy (FE-SEM). The chemical states of Al2O3 thin film surfaces were investigated with x-ray photoelectron spectroscopy (XPS).

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