Enhanced Thermal Performance of RF Amplifiers via Manifold Microchannel with Porous Structure

초록

High-power RF amplifiers, such as GaN high-electron-mobility transistors (HEMTs), generate intense local heat fluxes in the active device region, which can degrade electric performance. Conventional indirect cooling is limited by thermal resistances, making it difficult to manage localized hotspots efficiently. In this work, we evaluate an embedded manifold microchannel cooling structure designed for direct heat removal from the backside of a GaN-on-SiC HEMT device. Three-dimensional computational fluid dynamics (CFD) simulations of the baseline microchannel configuration were performed to quantify thermal resistance, pressure drop, and coolant flow effects. The results show a significant reduction in thermal resistance. In parallel, we present a fabrication concept for integrating a porous metal insert into the microchannel to enhance heat transfer area and uniformity. This approach is broadly applicable to high-power RF components, offering a path toward improved thermal performance, compact packaging, and operational stability.

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