Effect of Prebake Temperature on the Performance of Photochemically-Annealed InGaZnO Thin Film Transistors

초록

We investigated the influence of the prebake temperature on the performance of photochemically sol gel derived InGaZnO (IGZO) thin film transistors (TFTs). A prebake step was carried out during fabrication of IGZO thin films prior to the photochemical process in order to remove the solvent of the IGZO precursors. The temperature was adjusted from room temperature to 100 degrees C, and the morphologies of the IGZO thin films were observed to be significantly affected by the prebake temperature. The results indicated that a temperature of 50 degrees C was the optimum, yielding the best performance of the fabricated devices. Therefore, sol gel derived IGZO thin films should be moderately prebaked in order for the photochemical-annealing process to be effective.

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