Bi-induced phonons in GaAs1-xBix

초록

GaAs1-xBix (x < 3%) was studied using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at 186 cm(-1) and 214 cm(-1). By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN-mode) in GaAsN, the phonon mode at 214 cm(-1) is identified as originating from the substitutional Bi at the As-site in GaAsBi.

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