Separate Extraction of Densities of Interface and Bulk Trap States in High-Mobility ZnON Thin-Film Transistors

초록

Energy distributions of the density of interface and bulk trap states were separately extracted from high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs) using the sub-threshold slope and space-charge-limited current techniques. From the experiments, similar to 77% of the sub-gap trap states were attributed to the interface states and only similar to 23% of the total sub-gap states were attributed to the bulk trap states, in the ZnON TFTs at the conduction band edge. The obtained results are expected to promote the further development of the fabrication processes to decrease the density of interface states between the gate dielectric and ZnON channel layer to further improve the electrical performances and stabilities of ZnON TFTs.

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