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First-Principles Study of InAs/GaSb Semiconductor Superlattice Structures
- Efimov, Oleg;
- Yoon, Young-Gui
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2초록
We study the energetics of (InAs)(n)/(GaSb)(n) superlattices, where n ranges from 1 to 15, with (001), (110), and (111) interfaces from first-principles. The total energy of the unrelaxed superlattice structure with respect to that of the bulk equilibrium structure is found to be proportional to the number of In-Sb and Ga-As bonds at the interface. Relaxation of the structure leads to decrease in total energy, which is correlated with the interface volume.
키워드
InAs; GaSb; Interface; Superlattice; Energetics; SI(100); SI(111); INAS; GAAS; ALAS
- 제목
- First-Principles Study of InAs/GaSb Semiconductor Superlattice Structures
- 저자
- Efimov, Oleg; Yoon, Young-Gui
- 발행일
- 2013-08
- 유형
- Article
- 권
- 10
- 호
- 8
- 페이지
- 1684 ~ 1687
- 언어
- ENG
- 출판사
- AMER SCIENTIFIC PUBLISHERS
- 발행국가
- 미국
- 분량
- 4 페이지
- ISSN
- E 1546-1963
P 1546-1955