First-Principles Study of InAs/GaSb Semiconductor Superlattice Structures

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초록

We study the energetics of (InAs)(n)/(GaSb)(n) superlattices, where n ranges from 1 to 15, with (001), (110), and (111) interfaces from first-principles. The total energy of the unrelaxed superlattice structure with respect to that of the bulk equilibrium structure is found to be proportional to the number of In-Sb and Ga-As bonds at the interface. Relaxation of the structure leads to decrease in total energy, which is correlated with the interface volume.

키워드

InAs; GaSb; Interface; Superlattice; Energetics; SI(100); SI(111); INAS; GAAS; ALAS
제목
First-Principles Study of InAs/GaSb Semiconductor Superlattice Structures
저자
Efimov, Oleg; Yoon, Young-Gui
DOI
10.1166/jctn.2013.3109
발행일
2013-08
유형
Article
저널명
Journal of Computational and Theoretical Nanoscience
권
10
호
8
페이지
1684 ~ 1687