Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory

초록

This letter presents dual functions including selector and memory switching in a V/SiOx/AlOy/p(++ )Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 mu A. The shifts to the V-electrode side of the oxygen form the VOx layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 mu A) applied to the device, a bipolar memory switching is obtained, which is attributed to formation and rupture of the conducting filament in SiOy layer. 1.5-nm-thick AlOy layer with high thermal conductivity plays an important role in lowering the off-current for memory and threshold switching. Through the temperature dependence, high-energy barrier (0.463 eV) in the LRS is confirmed, which can cause nonlinearity in a low-resistance state. The smaller the CCL, the higher the nonlinearity, which provides a larger array size in the cross-point array. The coexistence of memory and threshold switching in accordance with the CCL provides the flexibility to control the device for its intended use.

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