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Synaptic Properties Considering Temperature Effect in HfOx-Based Memristor Demonstration of Homo-thermal Synaptic Behaviors
- Chen, Jia;
- Kim, Sungjun;
- Chen, Ying-Chen;
- Kim, Min-Hwi;
- Li, Yi;
- 외 4명
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0초록
In this work, we fabricated HfOx-based RRAM-type memristors that are CMOS-compatible and analyzed its synapse characteristics. Ni/HfOrdr-Si filament-type device exhibits abrupt resistive changes in both SET and RESET operations in the same pulse response as the DC sweep, while interface-type Ni/Hfo(x),/in'Si devices show gradual changes. Interface-type devices exhibit more dynamic states as the temperature rises, while the recognition rate of neural network using memristive synapses did not degrade for T < 145 C. Our results suggest that neuromorphic chips fabricated using RRAM-type memristors can operate under wide temperature range.
키워드
HfOx; Memristor; synapse; neural network; and Pattern Recognition
- 제목
- Synaptic Properties Considering Temperature Effect in HfOx-Based Memristor Demonstration of Homo-thermal Synaptic Behaviors
- 저자
- Chen, Jia; Kim, Sungjun; Chen, Ying-Chen; Kim, Min-Hwi; Li, Yi; Miao, Xiang-Shui; Chang, Yao-Feng; Park, Byung-Gook; Lee, Jack C.
- 발행일
- 2018
- 유형
- Proceedings Paper
- 저널명
- 2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
- 언어
- ENG
- 출판사
- IEEE
- 발행국가
- 미국
- ISSN
- P 1930-8868