Dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors

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초록

Straightforward and successful dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors (FETs) are reported, in which the DEP is used to align and manipulate ZnO nanowires. The DEP-prepared multi-channel ZnO nanowire FETs can manage on-current exceeding similar to 1 mu A at low bias voltages.

키워드

FABRICATION
제목
Dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors
저자
Lee, S.-Y.; Hyung, J.-H.; Lee, S.-K.
DOI
10.1049/el:20080019
발행일
2008-05
유형
Article
저널명
Electronics Letters
권
44
호
11
페이지
695 ~ +