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Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices
- Suh, Dong-Seok;
- Kim, Cheolkyu;
- Kim, Kijoon H. P.;
- Kang, Youn-Seon;
- Lee, Tae-Yon;
- ... Yoon, Young-Gui;
- 외 4명
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44Citations
SCOPUS
48초록
We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists during programming in conventional phase change memory (PRAM) cells, which is only a minor supplement to Joule heating. Here, by rigorously designing devices, we have demonstrated an unprecedentedly high efficiency of PRAM, where the majority of the heat is supplied by the thermoelectric effect.
키워드
antimony compounds; germanium compounds; nanostructured materials; phase change memories; ternary semiconductors; thermoelectric devices; thermoelectricity; MERIT
- 제목
- Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices
- 저자
- Suh, Dong-Seok; Kim, Cheolkyu; Kim, Kijoon H. P.; Kang, Youn-Seon; Lee, Tae-Yon; Khang, Yoonho; Park, Tae Sang; Yoon, Young-Gui; Im, Jino; Ihm, Jisoon
- 발행일
- 2010-03
- 유형
- Article
- 권
- 96
- 호
- 12
- 언어
- ENG
- 출판사
- American Institute of Physics
- 발행국가
- 미국
- ISSN
- E 1077-3118
P 0003-6951