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Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
- Lee, Jung-Kyu;
- Jung, Sunghun;
- Park, Jinwon;
- Chung, Sung-Woong;
- Roh, Jae Sung;
- ... Kwon, Hyuck-In;
- 외 5명
WEB OF SCIENCE
59SCOPUS
67초록
Resistive-switching and current conduction mechanisms have been studied in TiN/Ti/TiOx/HfOx/TiN resistive-switching random access memories (RRAMs). From I-V characteristics and temperature measurement, thermionic emission is found to be the most appropriate mechanism representing the dominant current conduction in all the bias regions and resistance states. Low-frequency noise power spectrum is measured to analyze accurately the conduction mechanism, which corroborates the thermionic-emission. Also, using the migration of oxygen ions depending on the polarity of the applied field, we propose the resistive-switching model of a double-layered RRAM to explain the unique resistive-switching characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751248]
키워드
- 제목
- Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
- 저자
- Lee, Jung-Kyu; Jung, Sunghun; Park, Jinwon; Chung, Sung-Woong; Roh, Jae Sung; Hong, Sung-Joo; Cho, Il Hwan; Kwon, Hyuck-In; Park, Chan Hyeong; Park, Byung-Gook; Lee, Jong-Ho
- 발행일
- 2012-09
- 유형
- Article
- 권
- 101
- 호
- 10
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- ISSN
- E 1077-3118
P 0003-6951