Highly sensitive hydrogen sensor based on suspended, functionalized single tungsten nanowire bridge

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초록

A highly sensitive hydrogen sensor based on suspended and functionalized single tungsten nanowire is presented. The sensing tungsten nanowire is synthesized by focused ion beam-chemical vapor deposition (FIB-CVD) using W(CO)G precursor gas on batch-fabricated microelectrodes. The nanowire measures 10 mu m in length and 150 nm in diameter, and is suspended 50 mu m above the wafer substrate connecting two microelectrodes to enhance the exposure of nanowire surface to target gas molecules for improved chemisorptions. The nanowire is then functionalized by palladium-platinum (Pd-Pt) sputtering process to be sensitive to the hydrogen molecules. The significant increase of nanowire resistance is observed whenever it is exposed to hydrogen molecules, and the resistance is recovered to the original value after hydrogen molecules are purged out. The experimentally characterized hydrogen sensor shows 11.52% increase of resistance to the exposure to 1% (10,000 ppm) hydrogen and 99% nitrogen gas mixture at room temperature and atmospheric pressure. The lowest hydrogen concentration measured is 0.001% (10 ppm) with 0.58% corresponding resistance increase.

키워드

Suspended single nanowire; Tungsten nanowire; Functionalization; Focused ion beam-chemical vapor depositoin; Hydrogen sensor; FABRICATION; DEPOSITION
제목
Highly sensitive hydrogen sensor based on suspended, functionalized single tungsten nanowire bridge
저자
Choi, Jungwook; Kim, Jongbaeg
DOI
10.1016/j.snb.2008.10.046
발행일
2009-02
유형
Article
저널명
Sensors and Actuators, B: Chemical
권
136
호
1
페이지
92 ~ 98