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Full-Swing InGaZnO Thin Film Transistor Inverter with Depletion Load
- Lee, Jeong-Min;
- Cho, In-Tak;
- Lee, Jong-Ho;
- Kwon, Hyuck-In
Citations
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52초록
A high performance amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) inverter is implemented using the enhancement mode driver and the depletion mode load. The threshold voltage of the TFT is easily controlled by adjusting the active layer thickness in a-IGZO TFTs. The proposed inverter shows much improved switching characteristics including higher voltage gain, wider swing range, and higher noise margins compared to the conventional inverter with an enhancement load. (C) 2009 The Japan Society of Applied Physics
키워드
AMORPHOUS OXIDE SEMICONDUCTORS; PERFORMANCE; THICKNESS; TFTS
- 제목
- Full-Swing InGaZnO Thin Film Transistor Inverter with Depletion Load
- 저자
- Lee, Jeong-Min; Cho, In-Tak; Lee, Jong-Ho; Kwon, Hyuck-In
- 발행일
- 2009-10
- 유형
- Article
- 권
- 48
- 호
- 10
- 언어
- ENG
- 출판사
- JAPAN SOC APPLIED PHYSICS
- 발행국가
- 일본
- ISSN
- E 1347-4065
P 0021-4922