X-Band 6-Bit Phase Shifter with Low RMS Phase and Amplitude Errors in 0.13-mu m CMOS Technology

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초록

This paper proposes a CMOS 6-bit phase shifter with low RMS phase and amplitude errors for an X-band phased array antenna. The phase shifter combines a switched-path topology for coarse phase states and a switch-filter topology for fine phase states. The coarse phase shifter is composed of phase shifting elements, single-pole double-throw (SPDT), and double-pole double-throw (DPDT) switches. The fine phase shifter uses a switched LC filter. The phase coverage is 354.35 degrees with an LSB of 5.625 degrees. The RMS phase error is < 6 degrees and the RMS amplitude error is < 0.45 dB at 8-12 GHz. The measured insertion loss is < 15 dB, and the return losses for input and output are > 13 dB at 8-12 GHz. The input P1dB of the phase shifter achieves > 11 dBm at 8-12 GHz. The current consumption is zero with a 1.2-V supply voltage. The chip size is 1.46 x 0.83 mm(2), including pads.

키워드

X-band; phase shifter; phased array antenna; CMOS; SPDT; DPDT switch; ATTENUATOR
제목
X-Band 6-Bit Phase Shifter with Low RMS Phase and Amplitude Errors in 0.13-mu m CMOS Technology
저자
Han, Jang-Hoon; Kim, Jeong-Geun; Baek, Donghyun
DOI
10.5573/JSTS.2016.16.4.511
발행일
2016-08
유형
Article
저널명
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
권
16
호
4
페이지
511 ~ 519