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Vertical stack transistor, a display device including the vertical stack transistor, and a manufacturing method of the display device
- Tae Young Kim;
- Jong Woo Park;
- Hyuck-In Kwon;
- Dae-Hwan Kim;
- Hee-Joong Kim;
- 외 1명
초록
A vertical stack transistor includes: a first transistor and a second transistor, located in a vertical direction, wherein the first transistor includes a first gate electrode, a first insulating layer, a first electrode, a first channel, and a second electrode, which are sequentially stacked in the vertical direction, and the second transistor includes a second gate electrode, a second insulating layer, a third electrode, a second channel, and a fourth electrode, which are sequentially stacked in the vertical direction, wherein the second gate electrode and the second electrode are the same electrode.
- 제목
- Vertical stack transistor, a display device including the vertical stack transistor, and a manufacturing method of the display device
- 저자
- Tae Young Kim; Jong Woo Park; Hyuck-In Kwon; Dae-Hwan Kim; Hee-Joong Kim; Sae-Young Hong
- 발행일
- 2020-02-04
- 출원번호
- 16/100350
- 등록번호
- 10553725
- 출원일
- 2018-08-10
- 등록일
- 2020-02-04
- 지식재산권 유형
- 특허
- 양수인
- SAMSUNG DISPLAY CO., LTD.; CHUNG ANG UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION