Dependence of ferroelectricity on film thickness in nano-scale Pb(Zr,Ti)O-3 thin films

  • Hong, Jongin; 
  • Song, Han Wook; 
  • Choi, Jongwan; 
  • Kim, Sung Kwan; 
  • Kim, Yangsoo; 
  • 외 1명
Citations

WEB OF SCIENCE

5
Citations

SCOPUS

5

초록

We present the dependence of the ferroclectric polarization on the film thickness. Below the film thickness of 21 nm, Pb metallic phase was formed at grain boundary and the pervoskite phase disappeared. As the film thickness decreased, the intensity of phonon modes decreased and the compressive stress in the Pb(Zr,Ti)O-3 thin film, which had tetragonal and rhombohedral structures, increased. The remnant polarization decreased from 6 muC/cm(2) to 2.5 muC/cm(2), while the coercive field increased from 50 kV/cm to 150 kV/cm, with the decrease in film thickness from 152 nm to 32 nm. The suppression of ferroelectricity resulted from the crystallinity degradation observed using X-ray photoelectron spectroscopy (XPS) and Raman analysis and size effect derived from the residual compressive stress evaluated using a laser reflectance method. The Pb/(Zr+Ti) ratio would be the important factor determining the crystal structure in PZT thin films, especially nano-scale PZT films.

키워드

PZT; film thickness; stress; Raman spectra; ULTRATHIN; STRESS
제목
Dependence of ferroelectricity on film thickness in nano-scale Pb(Zr,Ti)O-3 thin films
저자
Hong, Jongin; Song, Han Wook; Choi, Jongwan; Kim, Sung Kwan; Kim, Yangsoo; No, Kwangsoo
DOI
10.1080/10584580490896337
발행일
2004
유형
Article; Proceedings Paper
저널명
Integrated Ferroelectrics
권
68
호
1
페이지
157 ~ 167