ZnO thin-film transistor ring oscillators with 31-ns propagation delay

초록

We have fabricated ring oscillators (ROs) using ZnO thin films deposited by using a spatial atomic layer deposition process at atmospheric pressure and low temperature (200 degrees C). Bottom-gate thin-film transistors with aluminum source and drain contacts were fabricated with a field-effect mobility of > 15cm(2)/V . s. Seven-stage ROs operated at a frequency as high as 2.3 MHz for a supply voltage of 25 V, corresponding to a propagation delay of 31 ns/stage. These circuits also had propagation delays of similar to 100 ns/stage at a supply voltage of 15 V. To the best of our knowledge, these are the fastest ZnO circuits reported to date.

키워드