Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors

초록

We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The sol-gel-processed a-IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga, and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed a-IGZO TFTs with a mobility of 0.5-2 cm(2)/V.s, on/off current ratio > 10(7), and a subthreshold slope of as steep as 1.5 V/dec were obtained.

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