Non-Volatile Organic Memory Devices Based on Solution-Processed 2,8-Difluoro-5,11-Bis(triethylsilylethynyl) Anthradithiophene Small Molecules

초록

Solution-processed 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin-film transistors (OTFTs) were fabricated and investigated to explore their potential for organic memory applications. A highly light-sensitive diF-TESADT OTFTs exhibited an almost irreversible threshold voltage shift (Delta V-TH) due to charge carrier trapping at gate dielectric interface under light illumination, i.e., photo-gating. The photo-assisted gate biasing was found to produce a more prominent Delta V-TH, indicating a wider window for memory applications. Further analysis revealed that the magnitude of Delta V-TH was proportional to electrical gate pulse duration, and the diF-TESADT OTFTs showed stable operation after tens of write/erase cycles. The high retention and stable properties of the diF-TESADT OTFTs demonstrate that the devices can be a promising platform for next generation photo-assisted memory and sensor systems.

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