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Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window
- Choi, Woon Kyung;
- Kim, Doo Gun;
- Choi, Young Wan;
- Lee, Seok;
- Woo, Deok Ha;
- 외 1명
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2초록
This study demonstrates the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor using the vertical window. The measured switching voltage and current are 3.36 V and 10 muA, respectively. The lasing threshold current is 131 mA at 25 degreesC. The output peak wavelength is 1570 nm at a bias current of 1.22 I-th and there is no input signal. The vertically injected depleted optical thyristor shows very good isolation between input and output signals. (C) 2005 American Institute of Physics.
키워드
MU-M; LASER-DIODE; DEVICE
- 제목
- Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor with vertical window
- 저자
- Choi, Woon Kyung; Kim, Doo Gun; Choi, Young Wan; Lee, Seok; Woo, Deok Ha; Kim, Sun Ho
- 발행일
- 2005-01
- 유형
- Article
- 권
- 86
- 호
- 2
- 페이지
- 021108 ~ 1
- 언어
- ENG
- 출판사
- AMER INST PHYSICS
- 발행국가
- 미국
- 분량
- -21106 페이지
- ISSN
- E 1077-3118
P 0003-6951