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Effects of the Selective Alkoxy Side Chain Position in Quinoxaline-Based Polymer Acceptors on the Performance of All-Polymer Solar Cells
- You, Hoseon;
- Lee, Seungjin;
- Kim, Donguk;
- Kang, Hyunbum;
- Lim, Chulhee;
- ... Kim, Felix Sunjoo;
- 외 1명
WEB OF SCIENCE
18SCOPUS
19초록
The effects of the position of alkoxy side chains in quinoxaline (Qx)-based polymer acceptors (PAs) on the characteristics of materials and the device parameters of all-polymer solar cells (all-PSCs) are investigated. The alkoxy side chains are selectively located at the meta, para, and both positions in pendant benzenes of Qx units, constructing PAs denoted as P(QxCN-T2)-m, P(QxCN-T2)-p, and P(QxCN-T2), respectively. Among them, P(QxCN-T2)-m exhibits the deepest energy levels owing to the enhanced electron-withdrawing effect of meta-positioned alkoxy chains, which is in contrast to P(QxCN-T2)-p where para-positioned alkoxy chains have an electron-donating property. In addition, the meta-positioned alkoxy chains induce good electron-conducting pathways, while the para-positioned ones significantly interrupt crystallization and intermolecular interactions between the conjugated backbones. Thus, when the PAs are applied to all-PSCs, a power conversion efficiency (PCE) of 5.07% is attained in the device using P(QxCN-T2)-m with efficient exciton dissociation and good electron-transporting ability. On the contrary, the P(QxCN-T2)-p-based counterpart has a PCE of only 1.62%. These results demonstrate that introducing alkoxy side chains at a proper location in the Qx-based PAs is crucial for their application to all-PSCs. © 2021 American Chemical Society.
키워드
- 제목
- Effects of the Selective Alkoxy Side Chain Position in Quinoxaline-Based Polymer Acceptors on the Performance of All-Polymer Solar Cells
- 저자
- You, Hoseon; Lee, Seungjin; Kim, Donguk; Kang, Hyunbum; Lim, Chulhee; Kim, Felix Sunjoo; Kim, Bumjoon J.
- 발행일
- 2021-10
- 유형
- Article
- 권
- 13
- 호
- 40
- 페이지
- 47817 ~ 47825
- 언어
- ENG
- 출판사
- American Chemical Society
- 발행국가
- 미국
- 분량
- 9 페이지
- ISSN
- E 1944-8252
P 1944-8244