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GaInP 2 overgrowth and passivation of colloidal InP nanocrystals using metalorganic chemical vapor deposition
- Hanna, M.C.;
- Mićić, O.I.;
- Seong, M.J.;
- Ahrenkiel, S.P.;
- Nedeljković, J.M.;
- 외 1명
Citations
SCOPUS
15초록
Thin GaInP 2 passivating films were deposited on isolated and close-packed arrays of colloidal InP/GaInP 2 core-shell nanocrystals (NC) using metalorganic chemical vapor deposition (MOCVD). The InP colloidal NCs were coated with 0.5-2.0 nm layer of GaInP 2 in solution to form core-shell NCs to prevent sintering of NC during the heating process. The NCs were then incorporated into the GaInP 2 matrix by the MOCVD growth technique. The results show that very strong electronic coupling between dots occurs in the complex composite when the distance between the core-shell NCs was reduced to ≥0.9 nm by using a hexylamine cap.
키워드
Epilayer lattices; Organic capping; Colloids; Energy gap; Film growth; Low temperature effects; Metallorganic chemical vapor deposition; Monolayers; Nanostructured materials; Optical resolving power; Passivation; Permittivity; Rapid thermal annealing; Semiconducting gallium compounds; Semiconductor quantum dots; Sintering; Synthesis (chemical); Transmission electron microscopy; Thin films
- 제목
- GaInP 2 overgrowth and passivation of colloidal InP nanocrystals using metalorganic chemical vapor deposition
- 저자
- Hanna, M.C.; Mićić, O.I.; Seong, M.J.; Ahrenkiel, S.P.; Nedeljković, J.M.; Nozik, A.J.
- 발행일
- 2004-02-02
- 유형
- Article
- 권
- 84
- 호
- 5
- 페이지
- 780 ~ 782
- 언어
- ENG
- 발행국가
- 미국
- 분량
- 3 페이지
- ISSN
- E 1077-3118
P 0003-6951