이종금속 4H-실리콘 카바이드 쇼트키 다이오드의 전기적 특성

초록

We investigated the electrical characterization of Ti Schottky diodes with embedded Au nanoparticleson n-type 4H-silicon carbide 4-H(SiC). From our measurements (I-V and C-V), we observedthat hetero-metal Ti Schottky diodes (embedded Au nano-particles and Ti) had 0.18 0.25 eV lowerbarrier heights than those of particle-free Ti Schottky diodes on n-type 4H-SiC. These phenomenasuggest that SBH lowering is caused by an enhanced electric eld due to the small size of the Aunano-particles and by the large SBH dierence between Au and Ti. We also tested these contactschemes on highly doped p+ SiC material in order to study ohmic contacts using linear TLMmeasurements. The results indicated that the ohmic contact with embedded Au nano-particles showed a lower total resistance compared to the particle-free samples.

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