Correlations Between Field-Effect Mobility and Gate Dielectric Materials in Solution-Processed Metal-Oxide Transistors

초록

In general, it is well known that high capacitance dielectric materials can improve the field effect mobility of oxide thin film transistors (TFTs) while significantly lowering the operation voltage. Although this phenomenon is considered as one of the important issues in metal-oxide device physics, the origin of the improved field effect mobility on the dielectric materials remains relatively unclear. In this study, we systematically investigated the correlation between field effect mobility of oxide semiconductor TFTs and dielectric materials using solution-processed indium gallium zinc oxide (IGZO) and aluminum oxide (AlOx)/zirconium oxide (ZrOx) for active semiconductor and dielectric materials, respectively. From these researches, it was noted that enhanced carrier generation due to the high capacitance at semiconductor/dielectric interface could be one of the reasons for the increased carrier transport in the active semiconductor layers.

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