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Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline-TiOx-Based Resistive-Switching Memory Devices
- Lee, Jung-Kyu;
- Cho, In-Tak;
- Kwon, Hyuck-In;
- Hwang, Cheol Seong;
- Park, Chan Hyeong;
- 외 1명
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8초록
Low-frequency noise (LFN) characteristics have been studied in polycrystalline-TiOx-based resistive random access memories (RRAMs). LFNs are proportional to 1/f in high-resistance state (HRS), but those in low-resistance state (LRS) are proportional to 1/f only in less than similar to 100 Hz. The normalized noise power in HRS is around three orders of magnitude higher than that in LRS. Bias dependence of 1/f noise shows that the current conduction mechanisms from noise measurements are consistent with those from the current-voltage relationships in TiOx-based unipolar RRAM devices.
키워드
Conduction mechanism; low-frequency noise (LFN); resistive switching; resistive random access memory (RRAM); 1/F NOISE; OXIDE-FILMS; 1-F NOISE
- 제목
- Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline-TiOx-Based Resistive-Switching Memory Devices
- 저자
- Lee, Jung-Kyu; Cho, In-Tak; Kwon, Hyuck-In; Hwang, Cheol Seong; Park, Chan Hyeong; Lee, Jong-Ho
- 발행일
- 2012-07
- 유형
- Article
- 권
- 33
- 호
- 7
- 페이지
- 1063 ~ 1065
- 언어
- ENG
- 출판사
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행국가
- 미국
- 분량
- 3 페이지
- ISSN
- E 1558-0563
P 0741-3106