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Origin of broad band emissions of 3C-silicon carbide nanowire by temperature and time resolved photoluminence study
- Lee, K. M.;
- Hwang, J. Y.;
- Urban, B.;
- Singh, A.;
- Neogi, A.;
- ... Lee, S. K.;
- 외 1명
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4초록
As-grown by chemical vapor deposition (CVD) technique, 3C-silicon carbide (3C-SiC) nanowires (NWs) were studied for their energy states by photonic interactions. Temperature dependent photoluminescence (TDPL) was employed in the study. High energy emissions in UV range were found. In order to better understand origins of the high energy emissions, a time resolved photoluminescence (TRPL) study was executed to manifest the nature of these high energy emissions. Observation with high resolution transmission electron microscopy (HRTEM) confirmed the UV emissions were due to the oxide formed on the outer surface of the NWs. (C) 2014 Elsevier Ltd. All rights reserved.
키워드
3C-SiC nanowire; High energy emissions from oxide layers; Temperature dependent; photoluminescence; Time-resolved photoluminescence; SILICON-CARBIDE; POROUS SILICON
- 제목
- Origin of broad band emissions of 3C-silicon carbide nanowire by temperature and time resolved photoluminence study
- 저자
- Lee, K. M.; Hwang, J. Y.; Urban, B.; Singh, A.; Neogi, A.; Lee, S. K.; Choi, T. Y.
- 발행일
- 2015-02
- 유형
- Article
- 권
- 204
- 페이지
- 16 ~ 18
- 언어
- ENG
- 출판사
- PERGAMON-ELSEVIER SCIENCE LTD
- 발행국가
- 영국
- 분량
- 3 페이지
- ISSN
- E 1879-2766
P 0038-1098