Growth and Analysis of 450 Kg Multicrystalline Silicon Ingot for Solar Cells Using Multi-Heating Block Directional Solidification

초록

We report the fabrication and characterization of 450 kg multicrystalline silicon (mc-Si) ingot through both controlled crystalline growth and minimization of the crystalline defects and impurities to enhance the power conversion efficiency (PCE) of mc-Si based solar cells. The concentrations of impurities were gradually increased from the center to the edge of mc-Si ingot caused by the incorporation of impurities from alumina crucible and internal furnace components. By further investigating the structural defects in mc-Si wafer, the solar cell performances of mc-Si wafers was found to be highly dependent on the minority carrier lifetime related to the crystal defects, grain orientation and boundaries. From the current density-voltage measurement of mc-Si based solar cells cut from block A, the obtained short current density (J(SC)), open circuit voltage (V-OC), and PCE (eta) were similar to 32.03 mA/cm(2), similar to 0.59 V, and similar to 14.65% under AM 1.5G illumination, respectively.

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