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Photogenerated plasmons in GaAs1-xBix
- Yoon, S.;
- Seong, M.J.;
- Fluegel, B.;
- Mascarenhas, A.;
- Tixier, S.;
- 외 1명
Citations
SCOPUS
8초록
Light scattering measurements in the dilute isoelectronically doped alloy Ga As1-x Bix reveal a large free electron population photogenerated by continuous-wave laser excitation at low temperature. Low-temperature time-resolved photoluminescence of the bismuth related near-band-gap states show carrier lifetimes of several nanoseconds. The authors attribute this to trapping of photoexcited holes at bismuth pair or cluster states located near the valence band maximum. © 2007 American Institute of Physics.
키워드
Carrier lifetime; Continuous wave lasers; Doping (additives); Energy gap; Gallium compounds; Hole traps; Laser excitation; Light scattering; Photoluminescence; Valence bands; Photoexcited holes; Plasmons
- 제목
- Photogenerated plasmons in GaAs1-xBix
- 저자
- Yoon, S.; Seong, M.J.; Fluegel, B.; Mascarenhas, A.; Tixier, S.; Tiedje, T.
- 발행일
- 2007
- 유형
- Article
- 권
- 91
- 호
- 8
- 언어
- ENG
- 발행국가
- 미국
- ISSN
- E 1077-3118
P 0003-6951