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Zn2+ induces stimulation of the c-Jun N-terminal kinase signaling pathway through phosphoinositide 3-kinase
- Eom, Soo-Jung;
- Kim, Eun Young;
- Lee, Ji Eun;
- Kang, Hyo Jung;
- Shim, Jaeyung;
- 외 3명
WEB OF SCIENCE
47SCOPUS
53초록
Zn2+, one of the most abundant trace metal ions in mammalian cells, modulates the functions of many regulatory proteins associated with a variety of cellular activities. In the central nervous system, Zn2+ is highly localized in the cerebral cortex and hippocampus. It has been proposed to play a role in normal brain function as well as in the pathophysiology of certain neurodegenerative disorders. We here report that Zn2+ induced stimulation of the c-Jun N-terminal kinase (JNK) pathway in mouse primary cortical cells and in various cell lines. Exposure of cells to Zn2+ resulted in the stimulation of JNK and its upstream kinases including stress-activated protein kinase kinase and mitogen-activated protein kinase kinase kinase. Zn2+ also induced stimulation of phosphoinositide 3-kinase (PI3K) The Zn2+-induced JNK stimulation was blocked by LY294002, a PI3K inhibitor, or by a dominant-negative mutant of PI3K gamma. Furthermore, overexpression of Rac1N17, a dominant negative mutant of Rac1, suppressed the Zn2+ - and PI3K gamma -induced JNK stimulation. The stimulatory effect of Zn2+ on both PI3K and JNK was repressed by the free-radical scavenging agent N-acetylcysteine. Taken together, our data suggest that Zn2+ induces stimulation of the JNK signaling pathway through PI3K-Rac1 signals and that the free-radical generation may be an important step in the Zn2+ induction of the JNK stimulation.
키워드
- 제목
- Zn2+ induces stimulation of the c-Jun N-terminal kinase signaling pathway through phosphoinositide 3-kinase
- 저자
- Eom, Soo-Jung; Kim, Eun Young; Lee, Ji Eun; Kang, Hyo Jung; Shim, Jaeyung; Kim, Seong Up; Gwag, Byoung Joo; Choi, Eui-Ju
- 발행일
- 2001-05
- 유형
- Article
- 권
- 59
- 호
- 5
- 페이지
- 981 ~ 986
- 언어
- ENG
- 출판사
- AMER SOC PHARMACOLOGY EXPERIMENTAL THERAPEUTICS
- 발행국가
- 미국
- 분량
- 6 페이지
- ISSN
- E 1521-0111
P 0026-895X