RF Characteristic Analysis Model Extraction on the Stacked Metal-Insulator-Metal Capacitors for Radio Frequency Applications

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초록

This brief aimed to report study results of radio frequency integrated circuit applicability through RF characteristic analysis model extraction on the stacked metal-insulator-metal (MIM) capacitor. We used analysis method enhancing capacitance density per unit area via a parallel connection of two MIM capacitors vertically. The total capacitance of the stacked MIM capacitor was 2.05 fF/mu m(2) and leakage current and breakdown voltage were 0.004 fA/mu m(2) and more than 50 V, respectively. Moreover, VCC1 showed a value less than 40 ppm/V, while VCC2 showed a value less than 20 ppm/V-2. Temperature coefficient of capacitance exhibited values less than 80 ppm/degrees C for every 25 degrees C increase between 25 degrees C and 125 degrees C. A specialized equivalent circuit with the parallel connection of MIM capacitance (CMIM1, CMIM2) was proposed for the stacked MIM capacitor. When extracted model parameter components were simulated, high accuracy was exhibited despite increased frequency by applying various parasitic components to the extraction.

키워드

Breakdown voltage; leakage current; model extraction; radio frequency; stacked metal-insulator-metal (MIM) capacitor; CMOS
제목
RF Characteristic Analysis Model Extraction on the Stacked Metal-Insulator-Metal Capacitors for Radio Frequency Applications
저자
Sul, Woo Suk; Pyo, Sung Gyu
DOI
10.1109/TED.2014.2330842
발행일
2014-08
유형
Article
저널명
IEEE Transactions on Electron Devices
권
61
호
8
페이지
3011 ~ 3013