Boron and Aluminum Codoped ZnO Transparent Conducting Films with High Electrical Stability

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초록

We suggest boron (B) and aluminum (Al) codoped ZnO (BAZO) transparent conducting thin films with high electrical stability for photovoltaic applications. The resistivity of widely used Al-doped ZnO (AZO) film decreased slightly by B doping. Above all, the resistivity of BAZO (4.9 at. % boron) increased by less than 1.5 times, whereas that of reference AZO film increased by over than 8 times after thermal annealing in atmospheric air. The carrier concentration and Hall mobility were much less degraded in BAZO films. X-ray photoelectron spectroscopy analysis showed that the peak portion related with chemisorbed oxygen at 100 nm-inside of the film was suppressed in BAZO film compared with AZO film. The B atoms would restrain the oxygen permeation into the film, which made the process of oxygen chemisorption inactive. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.002202jes] All rights reserved.

키워드

OXIDE THIN-FILMS; DAMP HEAT-STABILITY; AL FILMS; ZINC; RF; PARAMETERS
제목
Boron and Aluminum Codoped ZnO Transparent Conducting Films with High Electrical Stability
저자
Kang, Dong-Won; Kwon, Jang-Yeon; Lee, Do-Joong; Han, Min-Koo
DOI
10.1149/2.002202jes
발행일
2012
유형
Article
저널명
Journal of the Electrochemical Society
권
159
호
2
페이지
H61 ~ H65