Thienoisoindigo-Based Semiconductor Nanowires Assembled with 2-Bromobenzaldehyde via Both Halogen and Chalcogen Bonding

  • Noh, Juran; 
  • Jung, Sungwoo; 
  • Koo, Dong Geon; 
  • Kim, Gyoungsik; 
  • Choi, Kyoung Soon; 
  • ... Park, Juhyun; 
  • 외 3명
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초록

We fabricated nanowires of a conjugated oligomer and applied them to organic field-effect transistors (OFETs). The supramolecular assemblies of a thienoisoindigo-based small molecular organic semiconductor (TIIG-Bz) were prepared by co-precipitation with 2-bromobenzaldehyde (2-BBA) via a combination of halogen bonding (XB) between the bromide in 2-BBA and electron-donor groups in TIIG-Bz, and chalcogen bonding (CB) between the aldehyde in 2-BBA and sulfur in TIIG-Bz. It was found that 2-BBA could be incorporated into the conjugated planes of TIIG-Bz via XB and CB pairs, thereby increasing the π − π stacking area between the conjugated planes. As a result, the driving force for one-dimensional growth of the supramolecular assemblies via π − π stacking was significantly enhanced. TIIG-Bz/2-BBA nanowires were used to fabricate OFETs, showing significantly enhanced charge transfer mobility compared to OFETs based on pure TIIG-Bz thin films and nanowires, which demonstrates the benefit of nanowire fabrication using 2-BBA. © 2018, The Author(s).

제목
Thienoisoindigo-Based Semiconductor Nanowires Assembled with 2-Bromobenzaldehyde via Both Halogen and Chalcogen Bonding
저자
Noh, Juran; Jung, Sungwoo; Koo, Dong Geon; Kim, Gyoungsik; Choi, Kyoung Soon; Park, JaeHong; Shin, Tae Joo; Yang, Changduk; Park, Juhyun
DOI
10.1038/s41598-018-32486-z
발행일
2018-09
유형
Article
저널명
Scientific Reports
권
8
호
1